• Technical Conference: 

    09 – 14 May 2021

  • Exhibition: 

    10 – 14 May 2021

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SM1H

Lasers on Si and Hybrid Integration

Presider: Shamsul Arafin, ECE, Ohio State University

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Presentations

III-v-on-Silicon 1-GHz Mode-Locked Lasers Towards Frequency-Comb Applications (SM1H.1)
Presenter: Kasper Van Gasse, Ghent University-imec

Fundamental and technical noise sources in III-V-on-silicon mode-locked lasers are investigated and minimized. Their frequency stability is optimized to make them suited to applications such as dual-comb spectroscopy or dual-comb LIDAR.

Authors:Kasper Van Gasse, Ghent University-imec / Zhechao Wang, Ghent University-imec / Gunther Roelkens, Ghent University-imec / Theodor Hänsch, Max Planck Institute of Quantum Optics / Bart Kuyken, Ghent University-imec / Nathalie Picqué, Max Planck Institute of Quantum Optics

  Paper

A Nanosecond-Tunable Capacitive III-v/Si Distributed Feedback Baser (SM1H.2)
Presenter: Pierre Fanneau de La Horie, III-V Lab

We demonstrate a heterogeneously integrated III-V/Si capacitive distributed feedback laser, which is continuously tunable across a 10 GHz band in less than 2 ns, with record-low power consumption

Authors:Pierre Fanneau de La Horie, III-V Lab / Theo Verolet, III-V Lab / Jean-Guy Provost, III-V Lab / Thibaut Renaud, III-V Lab / Delphine Neel, III-V Lab / Stéphane Malhouitre, CEA-Leti / Valentin Ramez, CEA-Leti / Karim Hassan, CEA-Leti / Arnaud Wilk, III-V Lab / Alexandre Shen, III-V Lab / Joan Manel Ramirez, III-V Lab / David Bitauld, III-V Lab

  Paper

O and C/L Band InAs Quantum dot Lasers Epitaxially Grown on SOI Platform for Silicon Photonic Integration (SM1H.3)
Presenter: Wei Qi, Institute of Physics

Optically and electrically pumped InAs quantum dot (QD) lasers at O and C/L band telecommunication wavelengths are both demonstrated on SOI substrates by using homo-epitaxially formed (111)-faceted silicon hollow structures.

Authors:Wei Qi, Institute of Physics

  Paper

Electrically Injected GeSn Laser on Si Operating up to 110K (SM1H.4)
Presenter: Solomon Ojo, University of Arkansas

We demonstrated electrically injected GeSn laser with the threshold to as low as 353 A/cm2 at 10 K. The threshold reduction was achieved by introducing a thicker SiGeSn cap. The peak power was measured as 2.75 mW/facet at 10 K. At 110 K, the emission peak is at 2604 nm.

Authors:Sylvester Amoah, University of Arkansas / Solomon Ojo, University of Arkansas / Huong Tran, University of Arkansas / Grey Abernathy, University of Arkansas / Yiyin Zhou, University of Arkansas / Wei Du, Wilkes University / Joe Margetis, Arizona State University / John Tolle, Arizona State University / Baohua Li, Arktonics / Shui-Qing Yu, University of Arkansas

  Paper

1.55-um Si-Photonics-Based Heterogeneous Tunable Laser Integrated With Highly Stacked QD-RSOA (SM1H.5)
Presenter: Atsushi Matsumoto, National Inst of Information & Comm Tech

We demonstrated a Si-photonics-based heterogeneous tunable laser in the 1.55-mm-band with quantum dot reflective semiconductor optical amplifier. Relatively low threshold current could be achieved owing to high gain characteristic.

Authors:Atsushi Matsumoto, National Inst of Information & Comm Tech / Wataru Masuda, Waseda University / Kouichi Akahane, National Inst of Information & Comm Tech / Toshimasa Umezawa, National Inst of Information & Comm Tech / Naokatsu Yamamoto, National Inst of Information & Comm Tech / Tomohiro Kita, Waseda University

  Paper

1.3 µm Regrown Quantum-dot Distributed Feedback Lasers on (001) Si: a Pathway to Scale Towards 1 Tbit/s (SM1H.6)
Presenter: Yating Wan, University of California Santa Barbara

Regrown quantum-dot distributed feedback lasers on (001) Si demonstrated a SMSR of 50 dBm, a threshold current density of 440 A/cm2, a CW operation temperature of 70°C, and a path towards high-volume, low-cost transceivers.

Authors:Yating Wan, University of California Santa Barbara / Justin Norman, University of California Santa Barbara / Yeyu Tong, The Chinese University of Hong Kong / MJ Kennedy, University of California Santa Barbara / Chen Shang, University of California Santa Barbara / Jenny Selvidge, University of California Santa Barbara / Hon Ki Tsang, The Chinese University of Hong Kong / Arthur Gossard, University of California Santa Barbara / John Bowers, University of California Santa Barbara

  Paper

Low-Noise, Frequency-Agile, Hybrid Integrated Lasers for LiDAR (SM1H.7)
Presenter: Grigorii Likhachev, EPFL

We demonstrate a hybrid photonic integrated laser that exhibit intrinsic linewidth of 40 Hz, while offering megahertz actuation bandwidth with the tuning range larger than 1 GHz, attained by a DFB laser self-injection locking to a high-Q silicon nitride microresonator.

Authors:Grigorii Likhachev, EPFL / Johann Riemensberger, EPFL / Wenle Weng, EPFL / Junqiu Liu, EPFL / Hao Tian, Purdue / Anat Siddharth, EPFL / Rui Wang, EPFL / Viacheslav Snigirev, EPFL / sunil bhave, Purdue / Tobias Kippenberg, EPFL

  Paper

Surface Grating VCSEL-Integrated Amplifier/Beam Scanner With High Power and Single Mode Operation (SM1H.8)
Presenter: SHANTING HU, Tokyo Institute of Technology

We demonstrate a single-mode surface-grating VCSEL-integrated amplifier/beam scanner. The output power is over 500mW under pulsed operation. The continuous fan beam steering of 1.5° and a diffraction-limited narrow beam divergence of 0.06° are achieved.

Authors:SHANTING HU, Tokyo Institute of Technology / XIAODONG GU, Tokyo Institute of Technology / AHMED HASSAN, Tokyo Institute of Technology / MASANORI NAKAHAMA, Tokyo Institute of Technology / FUMIO KOYAMA, Tokyo Institute of Technology

  Paper