Jifeng Liu, Dartmouth College, USA
Jay Mathews, University of Dayton, USA
Si and SiGe alloys form the backbone of modern electronics. With the development of Si photonics, Ge-on-Si photonic devices have also matured in the past two decades. In the past 5 years, the emerging field of SiGeSn mid-infrared (MIR) integrated photonics has grown rapidly. Despite of earlier doubts on materials growth, MIR photodetectors, optically-pumped lasers, and electro-absorption modulators have been demonstrated. Interestingly, with increasingly higher Sn and/or Pb composition, these SiGeSnPb MIR semiconductors also naturally match towards the quantum material regime, including Dirac semimetals (counterpart of graphene in 3D), Weyl semimetals, and topological insulators. While quantum materials have been investigated for electronic devices, their unique photonic and optoelectronic properties have barely been investigated. Notably, SiGeSnPb system not only offers a unprecedentedly huge design space for quantum materials, but builds upon the success of existing Si electronics and photonics.
This symposium provides a timely platform for advancing this new and exciting field, including but not limited to the following topics:
(1) SiGeSnPb and related materials growth and optoelectronic characterization;
(2) Theoretical and experimental studies on the semiconductor to quantum material transition in SiGeSnPb system;
(3) Novel photonic properties of SiGeSnPb semiconductor and quantum materials;
(4) SiGeSnPb MIR and quantum material photonic device demonstration; and
(5) Related platform for photonic integration.