Organizers
Kan Wu, Shanghai Jiao Tong University, China
Nanxi Li, Institute of Microelectronics A*STAR, Singapore
With the increasing demands on the scalability and complexity of integrated photonic systems, on-chip loss has become a main obstacle preventing the total number of components to be integrated on a chip. Compared with semiconductor optical amplifier (SOA), rare-earth (RE) doped gain provides better noise performance during the signal amplification, which is key for specific applications such as comb and pulse amplification, narrow-linewidth laser, etc. Recent works have shown significant breakthrough on the RE doped amplifiers including output power (up to 145 mW), operation wavelength (from 1 μm to 2 μm) as well as noise figure (down to 5 dB). Integrated lasers based on RE doped gain have also shown great potential with linewidth down to 200 Hz and electro-optic tunability on thin-film lithium niobate platform. In this symposium, we share the recent important progress on RE doped integrated gain and devices and try to draw a clear picture how these RE-doped devices can benefit current research on photonic integration, nonlinear optics, frequency comb and quantum systems.
Invited Speakers
Jonathan Bradley, McMaster University, Canada
Active, Passive and Nonlinear Integrated Photonics in Tellurite-Coated Silicon Nitride
Ya Cheng, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, China
Integrated Active Lithium Niobate Photonic Devices
Sonia Garcia-Blanco, University of Twente, Netherlands
TBD
Xiangmin Liu, Shanghai Jiao Tong University, China
Photonic Crystal Laser on Thin Film Erbium-Doped Lithium Niobate
Yang Liu, Swiss Federal Institute of Technology Lausanne (EPFL), Switzerland
Photonic Integrated Circuit-Based Erbium-Doped Amplifiers and Lasers
Hong Tang, Yale University, USA
Unveiling Photon Statistics with an Integrated 100-pixel Photon-Number-Resolving Detector
Steven Touzard, National University of Singapore, Singapore
Building Quantum Networks of Superconducting Circuits Using Telecom Photons
Laurent Vivien, Université Paris-Saclay, France
Erbium-Doped Crystalline Oxides Integrated in Silicon Nitride Waveguides for Light Amplification