• Technical Conference: 

    07 – 12 May 2023

  • Exhibition: 

    09 – 11 May 2023

Rare-earth doped integrated gain and devices

Symposium Organizers

Kan Wu, Shanghai Jiao Tong University, China

Nanxi Li, Institute of Microelectronics A*STAR, Singapore

With the increasing demands on the scalability and complexity of integrated photonic systems, on-chip loss has become a main obstacle preventing the total number of components to be integrated on a chip. Compared with semiconductor optical amplifier (SOA), rare-earth (RE) doped gain provides better noise performance during the signal amplification which is key for specific applications such as comb and pulse amplification, narrow-linewidth laser, etc. Recent works have shown significant breakthrough on the RE doped amplifiers including output power (up to 145 mW), operation wavelength (from 1 μm to 2 μm) as well as noise figure (down to 5 dB). Integrated lasers based on RE doped gain has also shown great potential with linewidth down to 200 Hz and electro-optic tunability on thin-film lithium niobate platform. In this symposia, we share the recent important progress on RE doped integrated gain and devices and try to draw a clear picture how these RE-doped devices can benefit current research on photonic integration, nonlinear optics, frequency comb and quantum systems.


Invited Speakers

Jonathan Bradley, McMaster University, Canada

Ya Cheng, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, China
Integrated active photonic circuits on thin film lithium niobate

Sonia Garcia-Blanco, University of Twente, Netherlands

Xiangmin Liu, Shanghai Jiao Tong University, China
Photonic crystal laser on thin film erbium-doped lithium niobate

Yang Liu, Swiss Federal Institute of Technology Lausanne (EPFL), Switzerland
Photonic integrated circuit-based Erbium-doped amplifiers and lasers

Hong Tang, Yale University, USA

Steven Touzard, National University of Singapore, Singapore
Building quantum networks of superconducting circuits mediated by telecom photons

Laurent Vivien, Université Paris-Saclay, France
Recent advances in Erbium-doped active waveguides for on-chip light amplification