Phase-change materials (PCMs), such as Ge2Sb2Te5 (“GST”), Ge2Sb2Se4Te1, VO2 and Sb2Se3, have recently emerged as a promising platform to control light on-chip due to their fast, dramatic, and reversible change in refractive index. Since their initial demonstration on integrated and free-space optical devices, significant technical progress in the field of optical PCMs has been achieved in terms of finding new alloys with superior optical transparency, controlling PCMs both optically and electrically, and moving from single devices to large-scale photonic architectures. These advances have led to exciting applications ranging from reconfigurable photonic switches and metasurfaces to high-speed photonic memory and computing. With the growing academic and industrial interest in these unique materials, a roadmap toward large-scale integration at the foundry is crucial to inform future research in this field. This panel aims to initiate a lively discussion into both the opportunities and challenges for optical PCMs within the CMOS foundry process flow. Specific questions to be addressed in this panel include: Where do phase-change photonics address a clear need that is not addressed by conventional photonic components? What steps are needed to develop a phase-change photonic PDK? What technical hurdles must be overcome before optical PCMs are ready for foundry integration?
Carlos Rios Ocampo, University of Maryland, USA
Nathan Youngblood, University of Pittsburgh, USA
Peiman Hosseini, Bodle Technologies, UK
Juejun Hu, MIT, USA
Hyun Jung Kim, NASA, USA
Joyce Poon, University of Toronto, Canada