• Technical Conference: 

    15 – 20 May 2022

  • Exhibition: 

    17 – 19 May 2022

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Improvement of GaN Epitaxial Layer and AlGaN/GaN HEMTs by Patterned Sapphire Substrate Technology (JW1A.145)

Presenter: Hsin-Jung Lee, National Taiwan University

A microstructure was designed to reduce the dislocations in the epitaxial GaN layer and improve electrical characteristics of HEMTs by using the patterned sapphire substrates technology. AlGaN/GaN HEMTs with the maximum drain current density increased from 308 mA/mm to 469 mA/mm were achieved.

Authors:Cheng-Che Lee, National Taiwan University / Hsin-Jung Lee, National Taiwan University / Chien-Tsun Chan, National Taiwan University / Chieh-Hsiung Kuan, National Taiwan University

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