Planar Schottky Photodiode Based on Multilayered 2D GeAs for High-Performance VIS-NIR Broadband Detection (JW1A.16)
Presenter: Ghada Dushaq, New York University Abu Dhabi
we demonstrate a metal-semiconductor-metal Schottky photodiode with asymmetric contact geometries based on multilayered 2D GeAs. Results show low dark current with stable, reproducible, and remarkable broadband spectral response from UV to optical communication wavelengths.
Authors:Mahmoud Rasras, New York University Abu Dhabi / Ghada Dushaq, New York University Abu Dhabi