View A. Catrina Bryce, Chair of CLEO Subcommittee 3: Semiconductor Lasers, discussing gallium nitride lasers and VCSELs.

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Gallium Nitride Lasers and VCSEL Developments

Below are select presentations on this topic. To find additional relevant papers and sessions, visit the online conference program.

CMI3 • GaN Photonic-Crystal Surface-Emitting Laser Operating at Blue-Violet Wavelengths
Monday, May 5, 8:30 a.m.–9:00 a.m., Marriott San Jose Salon 5 and 6
Susumu Yoshimoto, Hideki Matsubara, Hirohisa Saito, Yue Jianglin, Yoshinori Tanaka, Susumu Noda; Kyoto Univ., Japan. Report on the first successful operation of current-driven GaN photonic-crystal surface-emitting laser, which can operate in blue-violet wavelength regions at room temperature.

CMI5 • CW Lasing of Current Injection Blue GaN-Based Vertical Cavity Surface Emitting Lasers
Monday, May 5, 9:15 a.m.–9:30 a.m., Marriott San Jose Salon 5 and 6
Tien-Chang Lu, Tsung-Ting Kao, Shih-Wei Chen, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang; Inst. of Electro-Optical Engineering, Natl. Chiao Tung Univ., Taiwan. Demonstrated CW laser operation of GaN-based VCSELs under current injection at 77K. CW laser action was achieved at a threshold current of 1.4mA, emitting at 462nm with a narrow linewidth of about 0.15nm.

CMGG4 • Threshold Current Reduction and Electrical Modulation of Degree of Circular Polarization in InAs/GaAs Quantum Dot Spin-VCSELs
Monday, May 5, 4:30 p.m.–5:00 p.m., Room J3
Debashish Basu, Chung Chiang Wu, Dipankar Saha, Zetian Mi, Pallab Bhattacharya; Univ. of Michigan, USA. Threshold current reduction and polarization modulation of an electrically injected spin-polarized VCSEL operating at 200 K have been investigated experimentally and theoretically.